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Article
Optical Properties of Thermally-Annealed Tin-Doped Indium Oxide Thin Films

Author: A.I. Hasan
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2009 Volume: 2 Issue: 2 Pages: 15-18
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, results of thermal annealing of tin-doped indium oxide thin films were presented. The effect of thermal annealing of the optical characteristics of such films was introduced. These characteristics include transmission, absorption coefficient, absorption depth, type of band gap and the dominant absorption processes. Thermal annealing may improve the diffusion of Sn dopants in the In2O3 structure and hence affect the optical properties of the resulted structure. The Sn-doped In2O3 thin films are widely used in the optoelectronics and integrated optics architecture.


Article
Temperature Dependency of Hall Coefficients in Cadmium Oxide Thin Films Prepared by Thermal Evaporation Technique

Authors: H.M. Mikhlif --- A.M. Raouf --- A.D. Nusaif
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2009 Volume: 5 Issue: 4 Pages: 27-30
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, the temperature dependencies of Hall coefficients in cadmium oxide thin films prepared by thermal evaporation technique. These coefficients included temperature-dependent Hall coefficient, logarithmic Hall coefficient and Hall mobility. Results showed that the extrinsic conduction prevails in studied samples and impurity atoms introduce energy levels within the energy gap and act as donors. The activation energy of the impurities generally ranged between 0.020eV and 0.070eV. An increase of carrier mobility with temperature was observed then it decreased in higher temperature due to lattice scattering of charge carriers. The values of optical bandgap ranged between 2.90eV and 3.30eV, which is in a good agreement with the those obtained for bulk CdO:Sn samples.

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