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Article
Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique

Authors: G.M.A. Yussif --- A.M.H. Enagar --- A.S. Megazi
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2010 Volume: 3 Issue: 1 Pages: 19-22
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, InZnO and InGaZnO were used as channel layers to fabricate enhancement mode thin film transistors on glass and flexible transparent substrate. The SiO2-In2O3-ZnO system and N2 plasma incorporated IZO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated.


Article
Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique

Authors: M.N. Hussain --- J.M. Abdul-Jabbar
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2010 Volume: 6 Issue: 1 Pages: 41-46
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.

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