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Preparation and Study of Indium Oxide Nanoparticles

Authors: Rashed T. Rasheed --- Sariya D. Al-Algawi --- Sahar Z. Tariq
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2014 Volume: 10 Issue: 4 Pages: 15-19
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this study, In2O3 was prepared by reaction of indium acetate as precursor. The physical properties of the film were characterized by XRD, SEM, AFM, UV–visible thin film and FTIR spectroscopy measurements. The complete vibration analysis was carried out and the optimized parameters are calculated using DFT (B3LYP) method with 3-21G basis set for In2O3. A study of the electronic properties; absorption wavelengths, band gap energy, dipole moment, Kubo gap (HOMO and LUMO) and frontier molecular orbital energies, are performed by DFT method.


Article
Preparation and characterization of PLD deposited Indium Selenide thin film
تحضير ودراسة خواص غشاء من انديوم سيلنيد بطريقة الترسيب بالليزر النبضي

Authors: Khaled Z. Yahea --- Amar H. Jareeze --- Heba Salam Tariq
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2014 Volume: 32 Issue: 2 Part (B) Scientific Pages: 264-270
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

Indium Selenide films were deposited by pulsed laser deposition (PLD) with a Nd-YAG laser under vacuum condition. During the deposition, the substrates were kept at room temperature. The typical thicknesses of films were 200nm, 800 nm. The films were analyzed by X-ray diffraction for the crystallographic, the surface morphology of the film were investigated by AFM. It has been observed that grain growth depend on film thickness. The optical properties were characterized in the ultraviolet–visible region employing optical transmission, absorption, band gap. The direct optical band gap value for the films was found to be of the order of (2.2, 2.1) eV for thickness (200,800) nm respectively at room temperature.

تم تحضير اغشية من انديوم سيلنيد بطريقة الترسيب بالليزر النبضي بليزر نيديموم-ياك تحت الضغط الجوي تم الحفاظ على حرارة القاعدة المرسبة عليها في درجة حرارة الغرفة. كان سمك الغشية المحضرة 200نانومتر و 800 نانومتر تم دراسة خاصية التبلور باستخدام حيود الاشعة السينية . تم دراسة تضاريس السطح بواسطة مجهر القوى الذرية وتم ملاحظة الحجم الحبيبي يعتمد على سمك الغشاء المحضر اما الخواص البصرية النفاذية والامتصاصية وفجوة الطاقة تم دراستها بالمنطقة المرئية والفوق البنفسجية ووجد ان فجوة الطاقة تساوي 2.2,2.1 لسمك الاغشية 200 نانومتر و800 نانومتر على التوالي بدرجة حرارة الغرفة .

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