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Article
Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

Authors: Duaa A. Mohammed --- Muslim F. Jawad
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2018 Volume: 36 Issue: 2 Part (B) Engineering Pages: 124-127
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are high homogenous and they containeduniformly distributed small grains.


Article
Influence the number of laser pulses and annealing temperature and the Structure and optical properties of In2O3: CdO films prepared laser induce plasma

Authors: Kadhim A. Aadim --- Nada K. Abbas --- Ashwaq T. Dahham
Journal: Iraqi Journal of Science المجلة العراقية للعلوم ISSN: 00672904/23121637 Year: 2018 Volume: 59 Issue: 3C Pages: 1567-1576
Publisher: Baghdad University جامعة بغداد

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Abstract

In this Research, (In2O3: CdO) films were prepared using pulsed laser deposition (PLD) method on glass substrate at room temperature deposited at laser influence 500mJ/cm2with different shoots N= (200,300,400,500and600). the structural, and the optical properties and the films are studied with different annealing temperatures (523and 623) K. Optical measurements and the films were analyzed by UV-VIS absorption spectra. The structural properties of samples were investigated by x-ray diffraction patterns of the films and show that the films and polycrystalline Structure with all shoots. Transmittance spectrum found is equal to 93.17%, refractive index range is 1.635 and energy gap range is 2.75-3.15ev.

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