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Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique

Authors: G.M.A. Yussif --- A.M.H. Enagar --- A.S. Megazi
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2010 Volume: 3 Issue: 1 Pages: 19-22
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


In this work, InZnO and InGaZnO were used as channel layers to fabricate enhancement mode thin film transistors on glass and flexible transparent substrate. The SiO2-In2O3-ZnO system and N2 plasma incorporated IZO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated.

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