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Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement

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Abstract

Schottky barrier-type devices are rectifying metal-semiconductor (M-S) structure. This device is used in microelectronics, in solar cell applications, and in chemical sensing [1]. In the Schottky model the amount of band bending is equal to the difference between the work functions, m and s of the metal and semiconductor respectively.

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2012 (1)