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Theoretical Studies Of Electron Transport Processes In Metal/Semiconductor Interfaces
دراسة نظرية لعملية الانتقال الالكتروني لسطح معدن - شبة الموصل

Authors: Hadi jabbar mujbil Al-Aagealy --- Mohsin A.,Hassooni
Journal: journal of kerbala university مجلة جامعة كربلاء ISSN: 18130410 Year: 2014 Issue: المؤتمر العلمي الثاني لكلية العلوم Pages: 105-112
Publisher: Kerbala University جامعة كربلاء


A quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system. For this system we can suppose two localized quantum vector states system with a conduction electron state vector l├ φ_D^et 〉 interacting with an acceptor state vector l├ φ_A^et 〉 of electron in band of metal with the interacting described by the coupling matrix element. Expression of rate constant 0f electron transfer for metal/semiconductor system derived upon Green function and quantum model and perturbation theory for transition between l├ φ_D^et 〉 and Iφ_A^et state when the coupling matrix element coefficient smaller than k_B T . The rate of electron transfer evaluated with orientation free energy using aMATLAP program. The calculate of the electron transfer rate constant are compared with experimental results as well as with theoretical results obtained for our mode.

ألوصف الكمي لحركية الانتقال الالكتروني غير الكظيم عند سطحي نظام معدن-شبه موصل أعتمد باستعمال أنموذج مبسط للنظام .لهذا النظام افترضنا حالتين كميتين متمركزتين هما حالة المانح. |├ D〉وحالة المستقبل


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