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Characterization of InZnO TFTs Prepared by DC Sputtering Technique

Authors: Moath N.H. --- Jasim M.A.
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2013 Volume: 9 Issue: 2 Pages: 41-46
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, depletion-mode transistors were made of InZnO thin filmsprepared and grown on transparent conductive substrates by DC sputteringtechnique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnOfilm were grown to get a better controllability of the carrier concentrationduring the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.

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