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Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method
الخصائصا لفیزیائیة لكاشف السلیكون المسامي MOS المحضر بطریقة الأكسدة الحراریة السریعة

Authors: Narges Z. Abdulzahra --- Wafaa K. Khalaf --- Alwan M. Alwan
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2009 Volume: 27 Issue: 11 Pages: 2286-2291
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

In this research we studying the sensitivity of a porous silicon photo detector, wefound it improved through rapid thermal oxidation processes. Under our optimumpreparation conditions, photocurrent can reach about 3408 μA (under power density 100mW/cm2 tungsten lamp illumination) and dark current is about 300μA(at reverse bias of 5V).

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