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Annealing effect on the optical properties of organic semiconductor Alq3: C60 blend thin films
تأثير التلدين على الخصائص البصرية لآغشية مزيج اشباه الموصلات العضوية Alq3: C60 الرقيق

Authors: Husham N. Noori هشام نصير نوري --- Lamiaa K. Abbas لمياء خضير عباس
Journal: Iraqi Journal of Physics المجلة العراقية للفيزياء ISSN: 20704003 Year: 2018 Volume: 16 Issue: 39 Pages: 1-10
Publisher: Baghdad University جامعة بغداد

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Abstract

The effect of heat treatment using different annealing temperatures on optical properties of bulk heterojunction blend (BHJ) Alq3: C60 thin films which are fabricated by the spin coating technique were investigated in this study. The films have been coated on a glass substrate with speed of 2000 rpm for one min and treated with different annealing temperature (373, 423 and 473) K under vacuum. The optical properties and the chemical bonds structure of blends as-deposited and heat treated have been studied by UV-Vis spectroscopic and Fourier Transform-Infra Red (FTIR) measurements respectively. The results of UV visible show that the optical energy gap decreasing with increasing the annealing temperature for the ratio (100:1) while decreasing with increasing the annealing temperature for ratio (100:10). The FTIR spectra measurement were applied to know the type of the bonds of Alq3: C60 BHJ thin films.

تم دراسة تأثير المعالجة الحرارية باستخدام درجات حرارة التلدين المختلفة على الخصائص البصرية لاغشية المتغاير الهجيني Alq3: C60 الرقيقة التي تم تصنيعها بطريقة تقنية الطلاء البرمي. تم طلاء هذه الأغشية على قواعد زجاجية بسرعة 2000 دورة خلال دقيقة واحدة ومعالجتها بدرجات حرارة تلدين مختلفة (373، 423، 473) كلفن في الفراغ. تمت دراسة الخصائص البصرية وتركيب الاواصر الكيميائية للمزيج غيرالمعالج حرارياً والمعالج حرارياً بواسطة قياسات الأشعة فوق البنفسجية – المرئية (UV-Vis) وقياسات فوريير للتحويل - الأشعة تحت الحمراء (FTIR) على التوالي. تظهر نتائج الأشعة فوق البنفسجية المرئية أن فجوة الطاقة البصرية تتناقص بزيادة درجة حرارة التلدين للنسبة (100:1) وتتزايد بزيادة درجة حرارة التلدين للنسبة (100: 10). تم تطبيق قياس أطياف FTIR لمعرفة نوع وموقع الاواصر لاغشية المتغاير الهجيني Alq3: C60.


Article
Annealing effect on the structural and Morphological properties of Organic Semiconductor Alq3:C60 blend Thin Films

Authors: Lamiaa Kh. Abbas --- Husham N. Noori --- Ameer F. Abdulameer
Journal: Iraqi Journal of Science المجلة العراقية للعلوم ISSN: 00672904/23121637 Year: 2018 Volume: 59 Issue: 3A Pages: 1253-1264
Publisher: Baghdad University جامعة بغداد

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Abstract

In this work, has been a studied the effect of thermal treatment using different annealing temperatures (373, 423 and 473) K in vacuum on structural and morphological properties of organic semiconductor Alq3:C60 thin films which are prepared by the spin coating on a glass, silicon and porous silicon. These films have been coated on substrates with speed of 2000 rpm. The structure properties of Tris(8-hydroxyquinoline) aluminum (III) (Alq3) and fullerene (C60) (100:1) and (100:10) blend as-deposited and treated have been studied by X-ray diffraction (XRD) for glass only and morphological properties by Atomic Force Microscope (AFM) for silicon and porous silicon substrates. The results of XRD pattern shows that the structure of (Alq3:C60) as-deposited and annealed thin films are polycrystalline in nature for both mixed weight ratio. The result of AFM measurements show that grain size increase is due to the increases of surface energy at high temperature. Surface roughness increasing and decreased randomly with the temperature can be attributed to the random distributions of the grains and also due to the phase change.

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