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Effect of Temperature on Silicon Carriers Mobilities Using MATLAB

Author: Saad N. Ibrahim
Journal: Al-Mustansiriyah Journal of Science مجلة علوم المستنصرية ISSN: 1814635X Year: 2017 Volume: 28 Issue: 3 Pages: 214-219
Publisher: Al-Mustansyriah University الجامعة المستنصرية


The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 K).

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