research centers


Search results: Found 6

Listing 1 - 6 of 6
Sort by

Article
Manufacturing Zener diode using ZnO-CuO-ZnO/PSi structures deposited laser-induced plasma technique
تصنيع الصمام الثنائي زينر باستخدام التركيبة أوكسيد الخارصين-أوكسيد النحاس-أوكسيد الخارصين/سليكون المسامي

Authors: Safa Kamal Mustafa صفا كمال مصطفى --- Raied K. Jamal رائد كامل جمال
Journal: Iraqi Journal of Physics المجلة العراقية للفيزياء ISSN: 20704003 Year: 2019 Volume: 17 Issue: 42 Pages: 147-157
Publisher: Baghdad University جامعة بغداد

Loading...
Loading...
Abstract

In this paper, Zener diode was manufactured using ZnO-CuO-ZnO/PSi heterostructure that used laser-induced plasma technique to prepare the nanostructure films. Five samples were prepared with a different number of laser pulses, started with 200 to 600 pulses on ZnO tablet with fixed the number of laser pulses on CuO tablet at 300 pulses. The pulse energy of laser deposited was 900mJ using ZnO tablet and 600mJ using CuO tablet. All prepared films shown good behavior as a Zener diode when using porous silicon as substrate.

في هذا البحث، تم تصنيع الصمام زينر الثنائي باستخدام بنية متجانسة (أوكسيد الخارصين-أوكسيدالنحاس-أوكسيد الخارصين)/سليكون المسامي التي تستخدم تقنية البلازما المحتثة بالليزر لإعداد الأغشية ذات التركيب النانوي. تم تحضير خمس عينات مع عدد نبضات مختلفة بالليزر تبدأ من 200 الى600 لأوكسيد الخارصين مع عدد نبضات ثابت على قرص اوكسيد النحاس 300 نبضة. طاقة الليزر النبضية 900 ملي جول لترسيب أوكسيد الخارصين و 600ملي جول لترسيب أوكسيد النحاس. أظهرت جميع الأفلام المعدة سلوكا جيدا مثل ثنائي زينر عند استخدام السيليكون المسامي كركيزة.


Article
Dark and Light Characteristics of Sb-Se Heterojunction Formed on Silicon Substrate
خصائص الظلام والإضاءة لتركيب ثنائي الوصلة الهجين أنتيمون - سيلينيوم على قاعدة سيليكونية

Author: Khaled Z. Yahiya
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2005 Volume: 24 Issue: 3 Pages: 285-290
Publisher: University of Technology الجامعة التكنولوجية

Loading...
Loading...
Abstract


Article
Band Diagram of p-PbTe/n-Si Heterostructure

Authors: R.A. Ismail --- W.K. Hamoudi --- Y.Z. Dawood
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2005 Volume: 1 Issue: 2 Pages: 27-30
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

Loading...
Loading...
Abstract

In the present work, the energy band diagram of p-PbTe/n-Si heterojunctions made by thermal evaporation of a polycrystalline PbTe layer deposited on a monocrystalline Silicon substrate is constructed. Based on I-V and C-V measurements, the band offsets ΔEC and ΔEV are found experimentally to be 270mV and 610mV respectively at 300K.


Article
Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique

Author: O.A. Hamadi
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2008 Volume: 4 Issue: 3 Pages: 33-36
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

Loading...
Loading...
Abstract

In this work, the effect of annealing on the electrical characteristics of the CdO-Si heterojunction produced by plasma-induced bonding technique was studied. The heterojunction was consisting of n-type CdO on a p-type silicon substrate. Results showed reasonable improvement in the electrical characteristics of this heterojunction within a range of annealing temperatures, above which the heterojunction showed degradation in its characteristics. This work produces CdO-Si of much better characteristics than same heterojunctions produced by thermal evaporation technique.


Article
Electrical and Photovoltaic Properties of Ag:ZnO/Si Heterojunction Device Prepared by Spray Pyrolysis Methode

Author: Marwa Abdul Muhsien Hassan
Journal: Al-Nahrain Journal of Science مجلة النهرين للعلوم ISSN: (print)26635453,(online)26635461 Year: 2012 Volume: 15 Issue: 1 Pages: 73-79
Publisher: Al-Nahrain University جامعة النهرين

Loading...
Loading...
Abstract

In this work, ZnO/p-Si and Ag:ZnO/p-Si heterostracture has been constructed on (111) oriented p-type silicon substrate using spray pyrolysis method. ZnO films were prepared with different doping ratios. The electrical and photovoltaic properties of these films have been investigated in order to get the optimum preparation conditions. The built- in potential (Vbi) is calculated under different Ag doping ratios, while from I-V measurements, the ideality factor (n) is calculated.

في هذا البحث تم تحضير مفرق هجين من اوكسيد الزنك (ZnO/p-Si) واكسيد الزنك المشوب بالفضة (Ag:ZnO/p-Si) على قواعد من السليكون نوع p-type وعند نسب تشويب مختلفه باستخدام طريقة الرش الكيميائي. تم دراسة كلا من الخواص الكهربائيه والفولتائيه الضوئيه لهذه الافلام للوصول الى افضل الشروط المؤديه الى افضل النتائج.


Article
An Analytical I-V Characteristics Model for Au-AlxGa1-xAs/GaAs VMT Heterojunctions Based on Non-Linear Charge-Control and Field-Dependent Mobility Formulations

Author: H. N. WAZEER
Journal: Univesity of Thi-Qar Journal مجلة جامعة ذي قار العلمية ISSN: 66291818 Year: 2009 Volume: 5 Issue: 2 Pages: 1-16
Publisher: Thi-Qar University جامعة ذي قار

Loading...
Loading...
Abstract

Abstract The velocity modulation transistor (VMT) has two channels with differing velocities. Small vertical distance between these channels can be achieved using epitaxial growth, opening the opportunity for higher speed than any other heterostructure field-effect transistor (FET). The non-linear charge-control formulation of the two-dimensional electron gas (2DEG) sheet carriers concentration (ns), which consider the variation of ns with Fermi-potential in the triangular potential quantum well of the VMT, has led to a bias-dependent effective offset distance of the 2DEG from the heterointerface. The consideration of variable 2DEG offset distance pushes the model characterization to great accuracy then the linear characterization does. Based on non-linear charge-control and a single set of analytical expressions for field-dependent mobility formulations for AlxGa1-xAs/GaAs heterostructure, we developed an analytical I-V characteristics model for VMT device. This model incorporates effects of both composition (x) and doping concentration (Nd) dependences. The model is suitable for computer aided design (CAD) applications in the analysis, design, and optimization of microwave and digital VMT devices.

Listing 1 - 6 of 6
Sort by
Narrow your search

Resource type

article (6)


Language

English (6)


Year
From To Submit

2019 (1)

2012 (1)

2009 (1)

2008 (1)

2005 (2)