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Article
Gain Characteristics of Silicon Transistor Treated by Laser

Author: Rana O. Mahdi
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2007 Volume: 25 Issue: 7 Pages: 890-896
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

In this work, profiles of laser-induced diffusion of arsenic in silicon arepresented. These profiles are considered to attempt increasing of the currentgain of silicon transistors. The current gain is well enhanced. Thisenhancement is attributed to the increase achieved in the diffusion lengthwithin a certain layer of emitter region. Laser-induced diffusion is a perfecttechnique for improving the characteristics of electronic devices since it isflexible, contactless, clean and well controlled.

في هذا البحث، جرى تقديم أنماط الانتشار المحتث بالليزر لشوائب الزرنيخ في السيليكون.تم اعتماد هذه الأنماط في محاولة لزيادة ربح التيار للترانزستورات المصنعة من السيليكون،وقد جرى تحسين ربح التيار بشكل جيد. يعزى هذا التحسن في ربح التيار إلى الزيادة المتحققةفي طول الانتشار خلال طبقة محددة من منطقة الباعث. تعد تقنية الانتشار المحتث بالليزرمثالية لتحسين خصائص النبائط الإلكترونية إذ أنها تتم بشكل مرن وبدون تماس ما بين الآلةوالعينة كما أنها نظيفة من حيث مخلفات العمل ويمكن التحكم بها بشكل جيد.


Article
Optoelectronic Characteristics of As-doped Silicon Photodetectors Produced by LID Technique

Authors: A.A. Hadi --- O.A. Hamadi
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2008 Volume: 1 Issue: 2 Pages: 23-26
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, optoelectronics characteristics of arsenic-doped silicon photodetectors produced by laser-induced diffusion technique were introduced. Results explained that the parameters of the photodetectors depend on laser energy and substrate temperature. Maximum Responsivity was obtained for the photodetectors prepared by laser fluence of 9.08J/cm2 at substrate temperature of 598K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 2.1 for As-doped Si photodetectors when substrate temperature is raised from 300K to 598K.


Article
Normalized Characteristics of Laser-Induced Diffusion of Arsenic Dopants in Silicon

Authors: Aseel A.K. Hadi --- Salma M. Hussain --- Oday A. Hamadi --- Rana O. Mahdi
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2007 Volume: 25 Issue: 4 Pages: 584-590
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

In this work, normalized characteristics of laser-induced diffusion ofarsenic in silicon are presented. These characteristics are considered as areenhancing the As-doped silicon-based devices. This enhancement is attributedto the increasing in the diffusion length within a certain layer of the activeregion in the device. Laser-induced diffusion is a perfect technique forimproving the characteristics of electronic devices because it is flexible,contactless, clean and well controlled

في هذا البحث، جرى تقديم الخصائص المقومة للانتشار المحتث بالليزر لشوائب الزرنيخفي السيليكون . يمكن اعتماد هذه الخصائص في محاولة تحسين خصائص النبائط المصنعة منالسيليكون المش  وب بالزرنيخ . يعزى هذا التحسن في الخصائص إلى الزيادة المتحققة في طولالانتشار خلال طبقة محددة من المنطقة الفعالة في مثل هذه النبائط . تعد تقنية الانتشار المحتثبالليزر تقنية مثالية لتحسين خصائص النبائط الإلكترونية لأنها تتم بشكل مرن وبدون تماس مابين الآلة والعينة كما أنها نظيفة من حيث مخلفات العمل ويمكن التحكم بها بشكل جيد.


Article
Profiling of Antimony Diffusivity in Silicon Substrates using Laser- Induced Diffusion Technique

Author: O.A. Hamadi
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2010 Volume: 3 Issue: 1 Pages: 23-26
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, profiles of laser-induced diffusion of antimony in silicon were presented. These profiles were considered to attempt enhancing of the silicon-based devices. This enhancement is attributed to the increasing achieved in the diffusion length within a certain layer of the active region in the device. Laser-induced diffusion is a perfect technique for improving the characteristics of electronic devices since it is flexible, contactless, clean and well controlled.


Article
Structural Characteristics Study of Indium Diffusion in Silicon Using a Pulsed Nd:YAG Laser

Authors: W.K. Hamoudi --- R.O. Dala Ali
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2005 Volume: 1 Issue: 1 Pages: 34-38
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In the current study, a pulsed Nd:YAG laser was employed to induce indium diffusion in silicon by laser irradiation of a thin indium film deposited on silicon. The work was aimed to study the structural characteristics changes of the irradiated region resulting from varying laser pulse energy within the range (0.25-0.53)J and varying silicon temperature from 300K to 373K during laser irradiation. Optical and scanning electron microscopes were used for the surface topography study of the samples. The study showed formation of linear cracks, protrusions and craters depending on the laser energy used. The indium diffusion depth within the silicon was determined using an energy dispersive spectra (EDS). This was done when illuminating at the laser melting threshold at substrate temperature of 373K and when illuminating at higher laser energy and substrate at room temperature (300K). the diffusion depth increased and the impurity concentration at the surface decreased as laser energy got higher. Higher substrate temperature helped increasing the impurity concentration at the surface.

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