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Band Diagram of p-PbTe/n-Si Heterostructure

Authors: R.A. Ismail --- W.K. Hamoudi --- Y.Z. Dawood
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2005 Volume: 1 Issue: 2 Pages: 27-30
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In the present work, the energy band diagram of p-PbTe/n-Si heterojunctions made by thermal evaporation of a polycrystalline PbTe layer deposited on a monocrystalline Silicon substrate is constructed. Based on I-V and C-V measurements, the band offsets ΔEC and ΔEV are found experimentally to be 270mV and 610mV respectively at 300K.

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