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Article
The Effect of Annealing Temperature on Structural & Optical Properties of Nanocrystalline SnO2 Thin Films Prepared by Sol-Gel Technique

Authors: Selma M.H. AL-Jawad --- Abdulhussain K. Elttayf --- Amel S. Sabr
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2016 Volume: 34 Issue: 4 Part (B) Scientific Pages: 490-498
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

In this work, studying the structural and optical Nano crystalline SnO2 thin films grown on cleaned glass substrates by using sol- gel (dip coating) technique. It is worthy to say that the thickness of the deposited film was of the order of (300-400)nm . The films are annealed in air at , 300◦C, 400◦C and 500◦C temperatures for 60 minutes. The films that are analyses by X-ray diffraction (XRD), Scanning electron microscopy (SEM) , atomic force microscopy and optical absorption spectroscopy technique. The size of crystalline was observed, as well as, so as to increase with increasing annealing temperature . XRD analysis reveals that the whole films are polycrystalline with tetragonal structure with preferred orientation of (110),(101),(200) and (211) . The increase of annealing temperature leads to raise the diffraction peaks and decrease of FWHM. The atomic force microscopy (AFM) and Scanning electron microscopy (SEM) results showed that the average grain size was increase with the increase in annealing temperature. Spectra of transmittance and absorbance was recorded at wavelengths range (300-1000)nm .The optical properties showed high transmission at visible regions. The optical band gap energy was found to be (3.5 , 3.75 , 3,87) eV at annealing temperature (300,400,500 )°C respectively.


Article
Effect of Post-Oxidation on SnO2 Thin Films
دراسة تاثير الاكسدة على الغشاء الرقيق SnO2

Author: Arina F. Mohammed
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2012 Volume: 30 Issue: 11 Pages: 1980-1986
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

An investigation which include synthesis of SnO2 thin film by depositing ontoglass substrates at room temperature using thermal evaporation technique. Thefilms were post-annealing in furnace tube at 250 oC temperature for different time(10, 20, 30 and 40 minutes). The films were characterized by AFM microscopy,FTIR and optical absorption spectrophotometer. The grain size was observed toincrease with increase the annealing duration. Absorbance spectra were taken toexamine the optical properties and band gap energy was observed to decrease withincrease the annealing duration. The effect of annealing time on the optical andmorphological properties of films were studied and discussed

هذا البحث يتضمن تحضير غشاء رقيق من مادة ثاني اوكسيد القصديرعلى قاعدة منالزجاج بدرجة حرارة الغرفة باستخدام تقنية التبخير الحراري. ثم تم تلدين العينات داخل فرنولاوقات مختلفة ( 30 ،20 ،10 و 40 ) دقيقة. بعدها تم oC انبوبي بدرجة حرارة تصل الى 250و الخصائص البصرية (FTIR) قياسات ، (AFM) دراسة خصائص الفلم بواسطة مجهرالمتضمنة الامتصاصية. وجد ان حجم الحبيبات يزداد بزيادة زمن التلدين. ايضا تم دراسة مخططالامتصاصية لفحص الخصائص البصرية حيث لوحظ ان قيمة فجوة الطاقة تقل بزيادة زمنالتلدين. هكذا تم دراسة ومنافشة تأثير زمن التلدين على الخصائص البصرية والتركيبية للفلمالمحضر.


Article
Effect of the Dielectric Barrier Discharge Plasma on the Optical Properties of SnO2 Thin Film

Authors: Hamid H. Murbat --- Ramiz Ahmad Al-Ansari --- Alaa Khamees Brrd
Journal: Al-Nahrain Journal of Science مجلة النهرين للعلوم ISSN: (print)26635453,(online)26635461 Year: 2016 Volume: 19 Issue: 2 Pages: 80-86
Publisher: Al-Nahrain University جامعة النهرين

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Abstract

In this paper, a dielectric barrier discharge DBD plasma system was used to study effects of the nonthermal plasma on the optical properties of the tin oxide (SnO2) thin films. tin oxide (SnO2) thin were deposed on cleaned glass substrates at 450˚C using spray pyrolysis deposition technique prepared from SnCl4:5H2O solution with concentration (0.1M).The prepared films were exposure to different time intervals (0,2,4,6,8 and 10)min.UV-VIS spectra of the films were studies using optical absorbance measurements which were taken in the spectral region from 190nm to 1100nm. The transmittance and reflectance spectra of the films in the UV-VIS region were also studied.The transmittance T, the Reflectance R, absorption coefficient α, energy gap Eg, extinction coefficient K, refractive index n, dielectric constant ϵ and optical conductivity were studied. It is found that the Reflectance, absorption coefficient, extinction coefficient and optical conductivity were increased with exposure time and the transmittance, energy gap, refractive index, dielectric constant were decreased with exposure time of DBD plasma.

تم في هذا البحث استخدام منظومة الحاجز العازل للتأثير على اغشية (SnO2) الرقيقة, تعمل هذه المنظومة على إنتاج البلازما غير الحرارية عند الضغط الجوي الاعتيادي, وتعمل هذه المنظومة عادة عند الترددات 0.05 و 500kHz وعند فولتية تصل الى 1500 kVolt-100. تحضير أغشية اوكسيد القصدير (SnO2) الرقيقة بطريقة الرش الكيميائي الحراري من رش محمول مكون من كلوريدات القصدير المائية (SnCl4: 5H2O) المذابة في الماء المقطر بتركيز (0.1M) وعلى شرائح زجاجية مسخنة الى درجة حرارة 450˚C.درست اطياف الاشعة المرئية – فوق البنفسجية للاغشية باستخدام حسابات الامتصاص البصري والتي اخذت في المنطقة الطيفية (190-1100) نانومتر. كما درست ايضا النفاذية والانعكاسية للاغشية في المنطقة المرئية – فوق البنفسجية UV-VIS.درس تاثير التعرض للبلازما لكل من النفاذية T, الانعكاسية, الامتصاصية R, معامل الخمود K, معامل الانكسار n و ثابت العزل ϵ. بينت النتائج ان كل من معامل الخمود والجزء الخيالي من ثابت العزل تزداد مع زيادة زمن التعريض للبلازما, بينما يقل كل من النفاذية والانعكاسية والجزء الحقيقي من ثابت العزل ومعامل الانكسار مع زيادة زمن التعريض للبلازما.


Article
Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation

Author: Halah H. Rashed
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2016 Volume: 34 Issue: 4 Part (B) Scientific Pages: 499-511
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

In this work, preparation of high quality conductive oxide SnO2 thin film by post-thermal trearment of deposited tin by vacuum thermal evaporation on glass and p -type silicon substratesfor preparation of metal-insulator-semiconductor hetrojunction.The opticalabsorption, electrical, structural and surface morphology of the SnO2 thin film on glass substrate were characterized byUV-VIS-NIR spectrophotometer, electrical conductivity, X-ray diffraction spectrum andatomic force microscope respectively.The X-Ray Diffraction pattern show that the SnO2 thin film is polycrystalline with and tetragonal rutile, Atomic Force Microscope show that the grains size of the thin film varies from 50 to 150 nm .The optical properties show that SnO2 thin film is high absorbance in Ultra-violet region, whereas it's transparent in the visible and near infrared regions and have direct optical band gap of 3.6 eV, and last the electrical conductivity results show that the resistivity is decrease with increase the temperature and activation energy is approximately to the 0.107eV.The electrical properties of n SnO2/SiO2/p Sihetrojunctionwere studied by I–V measurement under dark and illumination conditions, in the dark condition, I–V measurement reveals that the heterojunction have rectifying behavior, the ideality factor and the reverse saturation current of this diode are 5.18 and 1.5×10–6 A respectively. Under illumination condition, I–V measurement reveals that the photocurrent is larger than the dark current, and a linear relation between ISC and VOC with the incident light intensity to reach a maximum value beyond tends to saturated and become constant. These electrical properties of prepared device can its work as a detector or solar cell.


Article
Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition
تحضير ودراسة التركيب MOM ل SnO باستخدام ترسيب التفريغ الحراري 2

Authors: Omar Ghanim Ghazal عمر غانم غزال --- Dr. Luqman Sufer Ali أ.م.د. لقمان سفر علي
Journal: AL Rafdain Engineering Journal مجلة هندسة الرافدين ISSN: 18130526 Year: 2014 Volume: 22 Issue: 1 Pages: 99-111
Publisher: Mosul University جامعة الموصل

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Abstract

Resistive switching random access memory is one of the novel nonvolatile memorytechnologies that, has a promising future for replacing the conventional FLASH memory. Inthis work a detailed study made about the types of operations and understanding themechanisms of the resistance changing in the device. SnO2 thin films are deposited by usingThermal Vacuum Evaporation deposition method at room temperature on Al/glass substrateto produce Al/SnO2/Al/glass device structure. Optical properties are taken to measure theoptical band gap of SnO2. Resistive switching is observed by taking current voltage readingsat room temperature. RRAM cell showed unipolar resistive switching behavior with nooverlapping between reset and set voltage (1.5V, 2.5V respectively) ,also between high andlow resistance states (7.7KΩ,106Ω). Good retention and endurance are obtained and the ratiobetween HRS to LRS has been found to be at least (41) within 21 cycles

ا ل ذ ا ك ر ة ا ل ع ش و ا ئ ي ة ا ل م ع ت م د ة ع ل ى ا ل ت غ ير ر ير ا ا ل م و م ة ر ة ار ا ا ار د ق ا ل ت و ا ير م ي ا ل ل د ذ ار ة ل لر ذ ا ك ر ة ط ير ر ا ل م ت ار م ذ ر ة ة ل ر م ر ت وة ا ع د ي ا ق د ر ت م ع ل ى ا س ت د ا ل ا ل ذ ا ك ر ة ا ل ل م ل ي ة ا ل م ت خ د ة ن و ع ي لا ش . ي ا ا ذ ا ا ل ل ث ت م ت ا ل د ر ا س ة ب ش ك ف ص لأ ن و ا ع ار ذب ا ر ذ و رة SnO ا ل ذ ا ك ر ة ا ب ط ر ذ و ة ع م ل م ة كذ ل ك أ ل ية ال خ ل ي ة ة ا ل ت غ ي ر ا ل ذ ي ذ ا ر أ ع ل ي م ع ا د ت غ ي ر ق ي م ة و م ة ت ر م. تر ت ر س ر يب 2ة ك ذ ل ك ا ل ا و ة ا ل ع ل ي م ك م نر ت ا ل م ا ير و . ة قر د ا ر ذي Al/glass ا ل ت خ ي ر ا ل ل ر ا ر ي ي ا د ر ج ة ا ر ا ر ة ا ل غ ر ي ة ة ع ل ى س ا ح ك و ن نل و ي م س ي ج و ة ا ل ا م ق ة . ا ل ت غ ي ر ي ا ا ل م و م ة ة ت لا ا ظ ت ه ع ار د ا ر ذ ق ي م سر م ي ا ل ت ير م ر ر SnO ق ي م س م ي ا ل خ ص م ئ ص ا ل ض و ئ ي ة ل ا ح 2ا ل ف و ل ت يه ي ا د ر ج ة ا ر ا ر ة ا ل غ ر ي ة . ة ق د ا ظ ر ي ل ي ة ا ل ذ ا ك ر ة ت غ ي ر ي ا ا ل م و م ة ة ن و ع ا ا م د ي ا ل ف و ل ت ي ة ع د ة ج و د تر د ا بر ي ن106 ( . ة ق رد Ω , 7.7 KΩ ( 1.5 ( ك ذ ل ك ك م ن ت ق ي م ة ا ل م و م ة ة ا ل ع ل ي م ة ا ل رد ن ي م V,2.5V ( ب م م ذ و م رب )reset, set ( ي و ل ت ي م ي ا ل ع م1 ( د ة ر ة ة د ذ م و ر ة ل ل م ع ل و ر ة ر ن ر ة ل ل م و م ة ر ة ا ل ع ل ير م ا لر ى ة ا ل م و م ة ر ة ا ل رد ن ي م ا ظ ر ر ي ار ذ ا لر ذ ا ك ر ة ا ل م صر ا ت كر ر ا ر ا ب ل رد ة د ) 2. ) 1 ة ب أ س وء ا ل ظ ر ة ف ب لد ة د ) 2


Article
Structural and Optical characterization of Nanocrystalline SnO2 thin film prepared by spray pyrolysis technique
الخصائص التركيبية والبصرية لأغشية SnO2 نانوية التبلورالمحضرة بتقنية الرش الحراري

Author: Adel H.Omran عادل حبيب عمران الخياط
Journal: Journal of Kufa - physics مجلة الكوفة للفيزياء ISSN: 20775830 Year: 2013 Volume: 5 Issue: 1 Pages: 69-78
Publisher: University of Kufa جامعة الكوفة

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Abstract

Nanocrystalline Tin Oxide SnO2 thin films have been grown on cleaned glass substrates at 450 C○ using spray pyrolysis deposition technique, prepared from two precursor solutions SnCl2.2H2O and SnCl4.5H2O.The XRD analyses showed that these films have polycrystalline in nature with tetragonal rutile structure with preferred orientation of (110),(200),(211) and the crystalline size (grain size) of thin films are found to vary from 32.6 to 56.98 nm .UV -VIS spectra of the films were studied using the optical absorbance measurements which were taken in the spectral region from 190 nm to 1100 nm. The transmittance and ref1ectance spectra of the films in the UV -VIS region were also studied. Optical Constants such as optical band gap, absorption coefficient and extinction coefficient, were evaluated from these spectra. All the films were found to exhibit high transmittance greater than (~ 85 %), and high absorbance values at ultraviolet region which they decrease rapidly in the visible / near infrared region. The optical band gap energy was found 3.98 eV for sample A and 3.97 eV for sample B.

حضّرت اغشية اوكسيد القصدير SnO2 نانوية التبلورعلى قواعد زجاجية نظيفة مسخنة بدرجةة حةرار 450 C○ بأستعمال طريقة الرش الكيميائي الحراري. أذ حضرت مة محلةولي أوليةي مةا محلةول SnCl22H2O لنمةوذA ومحلول SnCl45H2Oلنموذ B . وقد بينت نتائج فحوصات الاشعة السينية XRD ان كافةة الاغشةية المحضةرذات تركيةةةةةد متعةةةةةد التبلةةةةةور polycrystalline مةةةةة نةةةةةوئ ربةةةةةاعي قةةةةةائ tetragonal وباتجا يةةةةةة سةةةةةائد(110),(200),(211) والحج البلوري )الحج الحبيبي( للأغشية المحضره يتراوح م 32.6 nm الى 56.98 nm .رسةت اطيةا الاشةعة المرئيةة فةو البنفسةجية لشغشةية بأسةتخداا حسةابات الامتصةار البصةري والتةي ا ة ت فةي -المنطقةة الطيفيةة 190 nm - 1100 nm . كمةا رسةت ايضةاا النفاذيةة والانعكاسةية لشغشةية فةي المنطقةة المرئيةة فةوالبنفسجية UV -VIS وم ه الاطيا حسبت الثوابت البصرية مثل فجو الطاقة البصرية ومعامةل الامتصةارومعامل الخمو ,واظهرت جميع الاغشةية نفاذيةة عاليةة اكثةر مة (~ 85 %) وامتصاصةية عاليةة فةي المنطقةة فةوالبنفسةةجية وتقةةل بالتةةدريج فةةي المنطقةةة المرئيةةة تحت الحمةةرا القريبةةة . وجةةدت قيمةةة فجةةو الطاقةةة البصةةرية تسةةاوي3.98 eV بالنسبة للنموذ A و 3.97 eV بالنسبة للنموذ B

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