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Annealing Effect on the Optical Properties of (CdO)1-x (Mg)x Thin Films
تأثير المعاملة الحرارية على الخصائص البصرية لأغشية (CdO)1-x (Mg)x الرقيقة

Author: Hadi Ahmed Hussin
Journal: journal of the college of basic education مجلة كلية التربية الاساسية ISSN: 18157467(print) 27068536(online) Year: 2014 Volume: 20 Issue: 84 / علمي Pages: 939-946
Publisher: Al-Mustansyriah University الجامعة المستنصرية

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Abstract

(CdO)1-x (Mg)x thin films with (x = 0.06) deposited on perheated glass substrates at temperature 350°C by chemical spray pyrolysis technique. We have studied the effect of annealing temperature at (400, 450) °C. Optical absorption studies in the wavelength range 300–900 nm in order to calculate the optical constants such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant. Results illustrate that the refractive index decreased at 600 nm while the extinction coefficient slightly increases after annealing, on the other hand, the values of real and imaginary parts of the dielectric are found to be decreases with increasing annealing. The skin depth is found to be decreases as the annealing temperature increased to 450 °C, so the skin depth is a transmittance related.

حضرت أغشية (CdO)1-x (Mg)x الرقيقة وبنسبة (x = 0.06) المرسبة على قواعد زجاجية مسخنة لدرجة حرارة 350 مئوية بطريقة التحلل الكيمياوي الحراري. درس تأثير التلدين وبدرجة حرارة 400 و450 درجه مئوية. تم دراسة طيف الامتصاصية في مدى الأطوال الموجية (900-300) نانومتر وذلك لغرض حساب الثوابت البصرية مثل معامل الانكسار، معامل الخمود، ثابت العزل بجزئية الحقيقي والخيالي. أوضحت النتائج بأن معامل الانكسار يقل عند الاطوال الموجية 600 نانومتر ومعامل الخمود يزداد بعد التلدين, بينما ثابت العزل بجزئية الحقيقي والخيالي وكذلك عمق القشرة جميعها تقل بزيادة درجة حرارة التلدين الى 400 درجه مئوية.


Article
Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique

Authors: M.N. Hussain --- J.M. Abdul-Jabbar
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2010 Volume: 6 Issue: 1 Pages: 41-46
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.


Article
Characterization of InZnO TFTs Prepared by DC Sputtering Technique

Authors: Moath N.H. --- Jasim M.A.
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2013 Volume: 9 Issue: 2 Pages: 41-46
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, depletion-mode transistors were made of InZnO thin filmsprepared and grown on transparent conductive substrates by DC sputteringtechnique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnOfilm were grown to get a better controllability of the carrier concentrationduring the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.

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