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Studying The Bonding Mechanismand Microstructure for Arc Welding of Dissimiler Steel to Copper
البنیة المجھریة وآلیة الربط لملحومات القوس الكھربائي غیر المتماثلة فولاذ الى النحاس

Author: عبد الله عذيب مشاري
Journal: Thi-Qar University Journal for Engineering Sciences مجلة جامعة ذي قار للعلوم الهندسية ISSN: 20759746 Year: 2011 Volume: 2 Issue: 1 Pages: 1-15
Publisher: Thi-Qar University جامعة ذي قار

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Abstract

The aim of this work is to study thebonding mechanism and the microstructure of copper to steel welded by shielded metal arc welding (SMAW). The electrodes that used are ECuSi and ECuSn8thenthe examination of microstructure by optical microscopic, it is clearlyobserved that the copper side are completely interfering with epitaxial growth when using ECuSn8 but the side of steel reveal interaction waves at the interface with nonepitaxial growth. Some of fine cracks observed at the interface with ECuSi. The use of ECuSn8 explaininterfering fine blockes from the steel inside the fusion zone.


Article
Optical properties of Pb1-xSnxSe epitaxial layers on (100)KCl, NaCl

Author: Mohammad M. Ali & Seif M. Meshari
Journal: Journal of Basrah Researches (Sciences) مجلة ابحاث البصرة ( العلميات) ISSN: 18172695 Year: 2011 Volume: 37 Issue: 2A Pages: 50-56
Publisher: Basrah University جامعة البصرة

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Abstract

Epitaxial Pb1-xSnxSe layers were grown onto cleaved and polished (100) KCl,(100) NaCl and (111)CaF2 substrates in a high vacuum system by means of the hot-wall-epitaxy (HWE) method. The source temperature of Pb1-xSnxSe ~ 570 oC and substrates temperature are ranging from 200 to 275 oC by increasing step 25 oC, growth rate (1.51-2.4 μm/h). The optical absorption constant is determined using FTIR in the (0.496-0.062) eV photon-energy range at room temperature. The data have been analyzed to estimate the forbidden bandwidth.

الشرائح الفوقية للمركب الثلاثي Pb1-xSnxSe نُميت على القواعد الأحادية (100)KClو (100)NaCl و (111)CaF2 تحت ظروف تفريغ عالي باستخدام طريقة HWE، حيث كانت درجة حرارة المصدر للمركب الثلاثي ما يقارب 570 oC بينما تدرجت درجة حرارة القاعدة من 200 الى 275 oC بمقدار زيادة 25 oC لكل مرحلة تبخير، معدل النمو للشرائح أثناء التبخير بحدود (1.51-2.4μm/h). حُددت بعض الخواص الضوئية لهذا المركب باستخدام مطياف FTIR في مدى طاقة الفوتون (0.496-0.062) eV في درجة حرارة الغرفة، تم تحليل هذه الخواص للحصول على حزمة الطاقة الممنوعة أو فجوة الطاقة الضوئية (Egop).


Article
Epitaxial and Structural Analysis of Nickel-Manganese-Gallium Films Prepared by Magnetron Sputtering

Authors: Ali H. Abbas --- Jérémy Tillier --- Daniel Bourgault --- Laurent Carbone
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2018 Volume: 14 Issue: 4 Pages: 13-18
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing magnetic-induced rearrangement of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes.

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